Temperature and aluminum composition dependent sheet carrier concentration at AlGaAs/GaAs interface

Journal of Physics D: Applied Physics

Volumn 33, Issue 1, 2000, Pages 18-23

  Sen, Sujata ^a   Pandey, Manoj K ^a   Haldar, Subhasis ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; ELECTRON GAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; STATISTICAL MECHANICS; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; FERMI-DIRAC STATISTICS;

INTERFACES (MATERIALS);

EID: 0033640358     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/1/303     Document Type: Article

References (16)

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