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Volumn 36, Issue 24, 2001, Pages 5845-5851

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

(4) Latt, Khin Maung a Lee, Y K a Seng, H L b Osipowicz, T b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTAL STRUCTURE; DEGRADATION; DIFFUSION; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; MULTILAYERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICA; SPUTTERING; TANTALUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

IONIZED METAL PLASMAS;

METALLIC FILMS;

EID: 0035893935 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/A:1013088624226 Document Type: Article

Times cited : (7)

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