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Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5444-5446

Radiative recombination characteristics in GaAs multilayer n+-i interfaces

(7) Shen, W Z a Jiang, L F a Yu, G a Lai, Z Y a Wang, X G b Shen, S C b Cao, X c

a SHANGHAI JIAO TONG UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890394 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1405137 Document Type: Article

Times cited : (4)

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