Effect of i-layer parameters on the performance of Si n+-i-n+ homojunction far-infrared detectors

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2180-2186

  Yuan, Haoxin ^a   Unil Perera, A G ^b  

^a GEORGIA STATE UNIVERSITY   (United States)

^b EGandG Judson   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRON TUNNELING; PHOTOEMISSION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

BACKGROUND LIMITED PERFORMANCE (BLIP); HOMOJUNCTIONS INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION (HIWIP); NOISE EQUIVALENT POWER (NEP);

INFRARED DETECTORS;

EID: 0031384590     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644633     Document Type: Article

References (15)

1. A. G. U. Perera Homojunction interfacial workfunction internal photoemission infrared detectors in Proc. SPIE 1995 vol. 2554 pp. 143-158.
2. A. G. U. Perera H. X. Yuan and M. H. Francombe Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysis J. Appl. Phys. vol. 77 pp. 915-924 1995.
3. A. G. U. Perera H. X. Yuan J.-W. Choe and M. H. Francombe Novel homojunction interfacial workfunction internal photoemission tunable far-infrared detectors for astronomy in Proc. SPIE 1995 vol. 2475 pp. 76-87.
4. W. F. Kosonocky State-of-art in Schottky-barrier IR image sensors in Proc. SPIE 1992 vol. 1685 pp. 2-19.
5. ++ layer IEEE Trans. Electron Devices vol. ED-41 pp. 1535-1540 1994.
6. x/Si heterojunction internal photoemission long-wavelength infrared detectors Appl. Phys. Lett. vol. 57 pp. 1422-1424 1990.
7. + homojunction far-infrared detectors J. Appl. Phys. vol. 79 pp. 4418-4425 1996.
8. J. M. Mooney and J. Silverman The theory of hot-electron photoemission in schottky-barrier IR detectors IEEE Trans. Electron Devices vol. ED-32 pp. 33-39 1985.
9. 1-x strained layers Solid-State Electron. vol. 34 pp. 453-465 1991.
10. J. G. Simmons Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film J. Appl. Phys. vol. 34 pp. 1793-1803 1963.
11. D. V. Geppert Theoretical shape of metal-insulator-metal potential barriers J. Appl. Phys. vol. 34 pp. 490-493 1963.
12. M. A. Lampert and P. Mark Current Injection In Solids. New York: Academic 1970.
13. C. R. Crowell and S. M. Sze Current transport in metal-semiconductor barriers Solid-State Electron. vol. 9 pp. 1035-1048 1966.
14. S. M. Sze Physics of Semiconductor Devices 2nd ed. New York: Wiley 1981.
15. A. Van der Ziel Noise in solid state devices in Advances In Electronics And Electron Physics L. Marton Ed. New York: Academic 1978 vol. 46.