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Volumn 77, Issue 4, 2000, Pages 510-512

Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules

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[No Author keywords available]

Indexed keywords


EID: 0000729011     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127027     Document Type: Article
Times cited : (26)

References (21)
  • 18
    • 85037512147 scopus 로고    scopus 로고
    • note
    • The background or residual absorption increases as the applied bias increases. It explains the difference between the absorption at saturation (0.7 V applied bias) and the residual absorption (0.9 V applied bias).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.