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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 7, 2001, Pages 752011-752017

Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

(4) Ling, C C a Fung, S a Beling, C D a Huimin, Weng b

a UNIVERSITY OF HONG KONG (Hong Kong)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY DERIVATIVE; GALLIUM; HYDROGEN; ZINC;

ARTICLE; CHEMICAL BINDING; COMPLEX FORMATION; ELECTRON TRANSPORT; POSITRON; SPECTROSCOPY;

EID: 0035881818 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.075201 Document Type: Article

Times cited : (23)

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