SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Sensors and Actuators, B: Chemical

Volumn 77, Issue 1-2, 2001, Pages 447-454

Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics

(4) Talazac, L a Barbarin, F a Varenne, C a Cuminal, Y a

a UNIVERSITÉ CLERMONT AUVERGNE (France)

Author keywords

Barrier height; Gas sensor; NO2; Schottky diode; Thin film

Indexed keywords

LEAKAGE CURRENTS; NITROGEN OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; THIN FILM DEVICES;

BARRIER HEIGHT;

ELECTROCHEMICAL SENSORS;

EID: 0035875935 PISSN: 09254005 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-4005(01)00723-7 Document Type: Article

Times cited : (14)

References (29)

1
- 0002250337
- Hydrogen sensitive MOS field-effect transistor
- (1975) Appl. Phys. Lett. , vol.26 , pp. 55-57
- Lundström, I.¹ Shivaraman, M.S.² Svensson, C.³ Lundkvist, I.⁴

2
- 0016556950
- A hydrogen-sensitive Pd-gate MOS transistor
- (1975) J. Appl. Phys. , vol.46 , pp. 3876-3881
- Lundström, I.¹ Shivaraman, M.S.² Svensson, C.³

3
- 0019609572
- x/Si hydrogen detector
- (1982) Sens. Actuat. , vol.2 , pp. 363-369
- Fonash, S.J.¹ Huston, H.² Ashok, S.³

4
- 0020846456
- Transport properties of a Pd/insulator/a-Si:H Schottky diode for hydrogen detection
- (1983) Sens. Actuat. , vol.4 , pp. 349-356
- D'Amico, A.¹ Fortunato, G.² Petrocco, G.³ Coluzza, C.⁴

5
- 0024715133
- The ammonia sensitivity of Pd-Ir alloy-gate MOS field-effect transistor
- (1989) Sens. Actuat. , vol.19 , pp. 177-181
- Weixin, Z.¹ Lingjuan, Z.²

6
- 0026046715
- A new hydrogen sensor based on a Pt/GaAs Schottky diode
- (1991) J. Electrochem. Soc. , vol.138 , pp. 159-162
- Lechuga, L.M.¹ Calle, A.² Golmayo, D.³ Tejedor, P.⁴ Briones, F.⁵

7
- 0001530047
- The ammonia sensitivity of Pt/GaAs Schottky barrier diodes
- (1991) J. Appl. Phys. , vol.70 , pp. 3348-3354
- Lechuga, L.M.¹ Calle, A.² Golmayo, D.³ Briones, F.⁴

8
- 0026837781
- Different catalytic metals (Pt, Pd and Ir) for GaAs Schottky barrier sensors
- (1992) Sens. Actuat. B , vol.7 , pp. 614-618
- Lechuga, L.M.¹ Calle, A.² Golmayo, D.³ Briones, F.⁴

9
- 0020173569
- Pd-InP Schottky diode hydrogen sensors
- (1982) Solid-State Electron. , vol.25 , pp. 753-758
- Yousuf, M.¹ Kuliyev, B.² Lalevic, B.³ Poteat, T.L.⁴

10
- 0019624025
- Effect of various substrates on the hydrogen sensitivity of palladium-semiconductor diodes
- (1981) J. Appl. Phys. , vol.52 , pp. 6227-6230
- Yamamoto, N.¹ Tonomura, S.² Matsuoka, F.³ Tsubomura, H.⁴

11
- 0003966393
- Academic Press, New York
- (1985) Solid State Chemical Sensors
- Lundström, I.¹ Svensson, C.²

12
- 0027647550
- Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
- (1993) Sens. Actuat. B , vol.15-16 , pp. 19-23
- Arbab, A.¹ Spetz, A.² Lundström, I.³

13
- 0030257118
- A novel oxygen gas sensor utilizing thin film diamond diode with catalysed tin oxide electrode
- (1996) Sens. Actuat. B , vol.35-36 , pp. 303-307
- Gurbuz, Y.¹ Kang, W.P.² Davidson, J.L.³ Kerns, D.V.⁴

14
- 0032632726
- High temperature Pt Schottky diode gas sensors on n-type GaN
- (1999) Sens. Actuat. B , vol.56 , pp. 64-168
- Luther, B.P.¹ Wolter, S.D.² Mohney, S.E.³

15
- 0004770484
- Gas-sensitive GaAs-MESFETs
- (1996) Sens. Actuat. B , vol.34 , pp. 543-547
- Jaegler, M.¹ Steiner, K.²

16
- 0027609824
- Catalyst-adsorptive oxide-semiconductor gas sensors
- (1993) Sens. Actuat. B , vol.13-14 , pp. 682-684
- Kang, W.P.¹ Kim, C.K.²

17
- 0028429119
- Intercation of planar polymer Schottky barrier diodes with gaseous substances
- (1994) Sens. Actuat. B , vol.20 , pp. 71-77
- Assadi, A.¹ Spetz, A.² Willander, M.³ Svensson, C.⁴ Lundström, I.⁵ Iinganäs, O.⁶

18
- 0032625188
- 2 sensor based on InP epitaxial thin layers
- (1999) Thin Solid Films , vol.348 , pp. 266-272
- Battut, V.¹ Blanc, J.P.² Goumet, E.³ Soulière, V.⁴ Monteil, Y.⁵

19
- 0004005306
- Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

20
- 0022711499
- +-n enhanced Schottky barrier structures on (1 0 0) InP
- (1986) J. Electrochem. Soc. , vol.133 , pp. 1021-1025
- Schwartz, G.P.¹ Gualtieri, G.J.²

21
- 0027664245
- High effective Schottky barriers on n-type InP using Zn-based metallizations and rapid thermal annealing
- (1993) Semiconduct. Sci. Technol. , vol.8 , pp. 1731-1740
- Clausen, T.¹ Leistiko, O.²

22
- 0031186591
- Metal-n-InP rectifying properties enhancement with Zn based metallizations and diffusion at moderate annealing temperatures
- (1997) J. Phys. III , vol.7 , pp. 1523-1535
- Barbarin, F.¹ Guillot, C.² Achard, J.³ Dugay, M.⁴ Lauron, B.⁵ Kim, D.Z.⁶

23
- 17144449938
- Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP
- (1998) Appl. Surf. Sci. , vol.123-124 , pp. 567-570
- Clausen, T.¹ Leistiko, O.²

24
- 0004240297
- Masson, Paris
- (1990) Physique des Semiconducteurs et des Composants Électroniques
- Mathieu, H.¹

25
- 3342986527
- Electron transport at metal-semiconductor interfaces: General theory
- (1992) Phys. Rev. B , vol.45 , pp. 13509-13523
- Tung, R.T.¹

26
- 0032116363
- 3 thin films activated by noble metals (Pd, Pt, Au) layers
- (1998) Sens. Actuat. B , vol.50 , pp. 52-59
- Penza, M.¹ Martucci, C.² Cassano, G.³

27
- 0028515008
- Urea biosensor based on ammonia gas-sensitive Pt/GaAs Schottky diode
- (1994) Sens. Actuat. B , vol.21 , pp. 205-208
- Lechuga, L.M.¹ Mier, G.² Calle, A.³ Golmayo, D.⁴ Briones, F.⁵

28
- 0023136403
- The ammonia sensitivity of platinum-gate MOSFET devices: Dependence on gate electrode morphology
- (1987) Sens. Actuat. B , vol.11 , pp. 73-90
- Ross, J.F.¹ Robins, I.² Webb, B.C.³

29
- 0029344293
- Electrode structure effect on the selectivity of gas sensors
- (1995) Sens. Actuat. B , vol.28 , pp. 55-58
- Filippov, V.I.¹ Terentjev, A.A.² Yakimov, S.S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.