Metal-n-InP rectifying properties enhancement with Zn based metallizations and diffusion at moderate annealing temperatures

Journal de Physique III

Volumn 7, Issue 7, 1997, Pages 1523-1535

  Barbarin, F ^a   Guillot, C ^a   Achard, J ^a   Dugay, M ^a   Lauron, B ^a   Kim, D Z ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; ELECTRIC CURRENTS; INTERFACES (MATERIALS); METALLIZING; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMAL DIFFUSION IN SOLIDS; THERMAL EFFECTS; ZINC;

PSEUDO SCHOTTKY JUNCTIONS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031186591     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997205     Document Type: Article

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