On the origin of resonance features in reflectance difference data of silicon

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 769-776

  Hingerl, K ^a   Balderas Navarro, R E ^b   Bonanni, A ^b   Tichopadek, P ^a   Schmidt, W G ^c  

^a PROFACTOR GMBH   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Dimerization; Optical anisotropy; Reflectance anisotropy spectroscopy; Reflectance difference spectroscopy; Si(0 0 1)surface; Si(1 1 0) surface; Si(1 1 1) surface; Strain; Stress

Indexed keywords

ANISOTROPY; DIMERIZATION; SPECTROSCOPY; STRAIN; STRESSES; SURFACE STRUCTURE;

REFLECTANCE ANISOTROPY SPECTROSCOPY; REFLECTANCE DIFFERENCE SPECTROSCOPY;

SILICON;

EID: 0035873261     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00114-3     Document Type: Article

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