GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

Opto-Electronics Review

Volumn 7, Issue 3, 1999, Pages 153-180

  Perera, A G U ^a   Shen, W Z ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

Author keywords

Emitter layer concentration effect; Extended cutoff wavelength; p GaAs homojunction interfacial workfunction internal photoemission far infrared detectors; Photoresponse mechanism

Indexed keywords

EID: 0002854731     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

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