Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 414-416

  Ershov, M ^a   Liu, H C ^b   Buchanan, M ^b   Wasilewski, Z R ^b   Ryzhii, V ^a  

^a UNIVERSITY OF AIZU   (Japan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE LASERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; PHOTOCONDUCTIVITY; PHOTOIONIZATION;

ELECTRON DRIFT VELOCITY; ELECTRON ESCAPE PROBABILITY; INFRARED RESPONSIVITY; NONLINEAR PHOTOCONDUCTIVITY EFFECTS;

INFRARED DETECTORS;

EID: 0030735780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118320     Document Type: Article

References (12)

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