A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors

Infrared Physics and Technology

Volumn 38, Issue 3, 1997, Pages 133-138

  Shen, W Z ^a   Perera, A G U ^a   Gamage, S K ^a   Yuan, H X ^a,d   Liu, H C ^b   Buchanan, M ^b   Schaff, W J ^c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c Cornell University   (United States)

^d EG&G   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHONONS; PHOTOCONDUCTIVITY; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS;

FAR INFRARED (FIR) DETECTORS; HOMOJUNCTION INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION (HIWIP);

INFRARED DETECTORS;

EID: 0031108804     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(97)00006-6     Document Type: Article

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