Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Applied Physics Letters

Volumn 79, Issue 7, 2001, Pages 967-969

  Liu, Wen Chau ^a   Yu, Kuo Hui ^a   Liu, Rong Chau ^a,b   Lin, Kun Wei ^a   Cheng, Chin Chuan ^a   Lin, Kuan Po ^a   Yen, Chih Hung ^a   Wu, Cheng Zu ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035855096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1394720     Document Type: Article

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