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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 299-306

Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon

(3) Lindner, J K N a Wenzel, S a Stritzker, B a

a UNIVERSITY OF AUGSBURG (Germany)

Author keywords

Implantation; Ion beam synthesis; Metallization; SiC; Silicides; Titanium

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTS; ELECTRON DIFFRACTION; METALLIZING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 0035852241 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00680-8 Document Type: Article

Times cited : (3)

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