Ion beam synthesis of n-type doped SiC layers

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 367-371

  Serre, C ^a   Panknin, D ^b   Perez Rodriguez A ^a   Romano Rodriguez A ^a   Morante, J R ^a   Kogler R ^b   Skorupa, W ^b   Esteve, J ^c   Acero, M C ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c CSIC   (Spain)

Author keywords

Doping; Ion beam synthesis; Ion implantation; SiC on Si

Indexed keywords

DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ION BEAMS; ION IMPLANTATION; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

ION BEAM SYNTHESIS;

SILICON CARBIDE;

EID: 0035852229     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00519-0     Document Type: Article

References (11)