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Volumn 10, Issue 2, 2000, Pages 152-156

Ion beam synthesis of polycrystalline SiC on SiO2 structures for MEMS applications

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; SILICA; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THERMAL INSULATING MATERIALS; X RAY DIFFRACTION ANALYSIS;

EID: 0342520576     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/2/309     Document Type: Article
Times cited : (9)

References (10)
  • 1
    • 33747502586 scopus 로고
    • Production of large-area single-crystal wafers of cubic SiC for semiconductor devices
    • Nishino S, Powell J A and Will H A 1983 Production of large-area single-crystal wafers of cubic SiC for semiconductor devices Appl. Phys. Lett. 42 460-2
    • (1983) Appl. Phys. Lett. , vol.42 , pp. 460-462
    • Nishino, S.1    Powell, J.A.2    Will, H.A.3
  • 2
    • 0023365266 scopus 로고
    • Growth and characterisation of cubic SiC single-crystal films on si
    • Powell J A, Matus L G and Kuczmarski M A 1987 Growth and characterisation of cubic SiC single-crystal films on Si J. Electrochem. Soc. 134 1558-65
    • (1987) J. Electrochem. Soc. , vol.134 , pp. 1558-1565
    • Powell, J.A.1    Matus, L.G.2    Kuczmarski, M.A.3
  • 3
    • 0007504887 scopus 로고
    • Epitaxial monocrystalline SiC films grown on Si by low-pressure chemical vapor deposition at 750 C
    • Golecki I, Reidinger F and Marti J 1992 Epitaxial monocrystalline SiC films grown on Si by low-pressure chemical vapor deposition at 750 C Proc. Mater. Res. Soc. Symp. 242 519-24
    • (1992) Proc. Mater. Res. Soc. Symp. , vol.242 , pp. 519-524
    • Golecki, I.1    Reidinger, F.2    Marti, J.3
  • 7
    • 0026627695 scopus 로고
    • Preparation of crystalline SiC thin films by plasma enhanced chemical vapor deposition and by ion beam modification of silicon
    • Derst G, Kalbitzer S, Krotz G and Muller G 1992 Preparation of crystalline SiC thin films by plasma enhanced chemical vapor deposition and by ion beam modification of silicon Mater. Sci. Eng. B 11 79-82
    • (1992) Mater. Sci. Eng. B , vol.11 , pp. 79-82
    • Derst, G.1    Kalbitzer, S.2    Krotz, G.3    Muller, G.4
  • 10
    • 0345440111 scopus 로고    scopus 로고
    • Determination of micromechanical properties of thin films by beam bending measurements with an atomic force microscope
    • Serre C, Pérez-Rodríguez A, Morante J R, Gorostiza P and Esteve J 1999 Determination of micromechanical properties of thin films by beam bending measurements with an atomic force microscope Sensors Actuators A 74 134-8
    • (1999) Sensors Actuators A , vol.74 , pp. 134-138
    • Serre, C.1    Pérez-Rodríguez, A.2    Morante, J.R.3    Gorostiza, P.4    Esteve, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.