β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications

Sensors and Actuators, A: Physical

Volumn 74, Issue 1, 1999, Pages 169-173

  Serre, C ^a   Romano Rodriguez A ^a   Perez Rodriguez A ^a   Morante, J R ^a   Fonseca, L ^b   Acero, M C ^b   Kogler R ^c   Skorupa, W ^c  

^a Unitat A ^*  (Spain)

^b CSIC   (Spain)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BONDING; CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM SYNTHESIS; WAFER BONDING;

SILICON WAFERS;

EID: 0344578022     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00311-2     Document Type: Article

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