Influence of amorphizing implants on boron diffusion in silicon

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 347-352

  Chao, H S ^a   Griffin, P B ^a   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; BORON; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTOR DOPING;

PILE UP/DEPLETION PHENOMENON; TRANSIENT ENHANCED DIFFUSION (TED);

SILICON WAFERS;

EID: 0031380924     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-347     Document Type: Conference Paper

References (16)