Self-limiting formation of silicon-nitride monolayer on Si(1 1 1) surface using N2/H2 mixture gas

Surface Science

Volumn 486, Issue 3, 2001, Pages

  Morita, Yukinori ^a,b   Ishida, Takao ^a   Tokumoto, Hiroshi ^a,b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Hydrogen molecule; Nitrogen molecule; Scanning tunneling microscopy; Silicon; Silicon nitride; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINARY MIXTURES; HYDROGEN; MONOLAYERS; MORPHOLOGY; NITRIDING; NITROGEN; REDUCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICON NITRIDE; SURFACE ROUGHNESS;

SURFACE NITRIDATION;

SURFACE STRUCTURE;

EID: 0035838295     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01121-9     Document Type: Article

References (18)