Hyperbolic hydrodynamical model of carrier transport in semiconductors

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 521-525

  Anile, Angelo Marcello ^a   Romano, Vittorio ^b   Russo, Giovanni ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b POLITECNICO DI BARI   (Italy)

^c UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

BTE; Electronic devices; Fluid mechanics; TCAD; Transport theory; VLSI

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; FUNCTIONS; HEAT CONVECTION; HYDRODYNAMICS; INTEGRATED CIRCUIT LAYOUT; METHOD OF MOMENTS; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY;

BOLTZMANN TRANSPORT EQUATION; EXTENDED THERMODYNAMICS; HYPERBOLIC HYDRODYNAMICAL MODEL;

VLSI CIRCUITS;

EID: 0032315415     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/93843     Document Type: Article

References (13)

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