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Volumn 226, Issue 3, 1998, Pages 217-224

Optical absorption edge in structure-inhomogeneous a-Si:H-based alloys

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MICROSTRUCTURE; PLASMA APPLICATIONS; SEMICONDUCTOR QUANTUM WELLS; SILANES; SILICON NITRIDE;

EID: 0032096019     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00452-9     Document Type: Article
Times cited : (8)

References (21)
  • 8
    • 0031372608 scopus 로고    scopus 로고
    • High-rate deposition of a-Si:H films in 55 kHz glow discharge: Growth mechanisms and film structure
    • San Francisco, April
    • B.G. Budaguan et al., High-rate deposition of a-Si:H films in 55 kHz glow discharge: growth mechanisms and film structure, presented at MRS Spring Meeting, San Francisco, April 1997.
    • (1997) MRS Spring Meeting
    • Budaguan, B.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.