High-rate deposition of a-Si:H films in 55 kHz glow discharge: growth mechanisms and film structure

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 585-590

  Budaguan, B G ^a   Aivazov, A A ^a   Sazonov, A Yu ^a   Popov, A A ^a   Berdnikov, A E ^a  

^a NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; FILM GROWTH; GLOW DISCHARGES; INFRARED SPECTROSCOPY; ION BOMBARDMENT; MASS SPECTROMETRY; MICROSTRUCTURE; PLASMAS;

FILM STRUCTURE; HIGH RATE DEPOSITION; OPTICAL EMISSION SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 0031372608     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-585     Document Type: Conference Paper

References (8)