Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2508-2512

  Budaguan, B G ^a   Sherchenkov, A A ^a   Stryahilev, D A ^a   Sazonov, A Y ^a   Radosel'sky, A G ^a   Chernomordic, V D ^b   Popov, A A ^b   Metselaar, J W ^c  

^a NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; INFRARED SPECTROSCOPY; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; SILICON SOLAR CELLS; THERMAL EFFECTS;

CAPACITANCE VOLTAGE CHARACTERISTICS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0032123883     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838669     Document Type: Article

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