Hydrogen in a-Si:H deposited by 55 kHz PECVD

Materials Research Society Symposium - Proceedings

Volumn 513, Issue , 1998, Pages 387-392

  Budaguan, B G ^a   Aivazov, A A ^a  

^a Institute of Electronic Technology   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL DEFECTS; DESORPTION; DIFFUSION IN SOLIDS; GLOW DISCHARGES; HYDROGEN; MICROSTRUCTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0031627952     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-513-387     Document Type: Conference Paper

References (12)