Large field-emission current density from heavily Si-doped AIN and AlxGa1-xN (0.38≤x<1)

SID Conference Record of the International Display Research Conference

Volumn , Issue , 2001, Pages 1233-1236

  Kasu, Makoto ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; SILICON; THICKNESS MEASUREMENT;

FIELD EMISSION (FE);

ELECTRON EMISSION;

EID: 0035782510     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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