Calculations of field emission from AlxGa1-xN as a function of stoichiometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 919-922

  Chung, M S ^a   Cutler, P H ^b   Miskovsky, N M ^b   Kumar, N ^c  

^a University of Ulsan   (South Korea)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c UHV Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BAND STRUCTURE; COMPOSITION EFFECTS; CURRENT DENSITY; STOICHIOMETRY; TERNARY SYSTEMS;

ELECTRON AFFINITIES;

FIELD EMISSION CATHODES;

EID: 0034156330     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591298     Document Type: Article

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