150 nm dense/isolated contact hole study with Canon IDEAL technique

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 1068-1076

  Ebihara, Takeaki ^a   Rhyins, Peter ^b   Oga, Toshihiro ^a   Martin, Pat ^b   Sweis, Monika ^b  

^a Canon USA ^*  (United States)

^b PHOTRONICS INC   (United States)

Author keywords

Contact hole; Double exposure; IDEAL; PSM

Indexed keywords

ERROR ANALYSIS; IMAGE ANALYSIS; IMAGING SYSTEMS; LITHOGRAPHY; PHASE SHIFT; SILICON WAFERS;

PHASE SHIFT MASKS (PSM);

MASKS;

EID: 0035767734     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458270     Document Type: Article

References (7)

1. C. Romeo, O. Canestrari, and A. Fiorino et al., "IDEAL double exposure method for poly-level structures", Proceedings of SPIE, Optical Microlithography, 4000, (2000) pp. 240-251.
2. 1=0.3 lithography", Proceedings of SPIE, Optical Microlithography, 3679-36, (1999) pp. 240-251.
3. R.J. Socha et al., "Design of 200nm, 170nm, 140nm DUV Contact Sweeper High Transmission Attenuating Phase Shift Mask Part 1", Proceedings of SPIE, Optical Microlithography, 3546, (1998) pp. 617-641.
4. R.J. Socha et al., "Design of 200nm, 170nm, 140nm DUV Contact Sweeper High Transmission Attenuating Phase Shift Mask Part2", Proceedings of SPIE, Optical Microlithography, 3679, (1999) pp. 38-54.
5. J.H. Chen et al., "Techniques for Printing Sub-0.2um Contact Holes in Logic Devices at 248nm", Proceedings of Microlithography Symposium Interface '2000 (2000) pp. 13-18.
6. M.D. Levenson et al., "Phase phirst! An improved strong-PSM paradigm", Proceedings of SPIE, BACUS Symposium, 4186, (2000) pp. 395-404.
7. M.D. Levenson et al., "SCAA mask exposures and Phase Phirst! design for 110 nm and below", Proceedings of SPIE, Optical Microlithography, 4346, (2001).