Junction formation by hydrogenation for HgCdTe diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4369, Issue , 2001, Pages 412-418

  Yang, Kee Dong ^a   Choi, Jong Hwa ^a   Bae, Soo Ho ^a   Lee, Hee Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

HgCdTe; Hydrogenation; Junction formation; LWIR photodiode; Type conversion

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GOLD; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; MERCURY COMPOUNDS; PHOTODIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

DIFFERENTIAL HALL MEASUREMENT; JUNCTION FORMATION; MERCURY CADMIUM TELLURIDE; PHOTOVOLTAIC INFRARED DETECTOR; TYPE CONVERSION;

INFRARED DETECTORS;

EID: 0035761555     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.445305     Document Type: Conference Paper

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