Characteristics of gradually doped LWIR diodes by hydrogenation

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 859-864

  Kim, Young Ho ^a,b   Kim, Tae Sik ^a   Redfern, D A ^c   Musca, C A ^c   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b KEC Research Institute of Technology   (South Korea)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; HALL EFFECT; HYDROGENATION; INFRARED DETECTORS; LASER BEAM EFFECTS; MERCURY COMPOUNDS; PHOTODIODES; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

LASER BEAM INDUCED CURRENT (LBIC); LOW WAVELENGTH INFRARED (LWIR) DETECTORS; MERCURY CADMIUM TELLURIDE; VACANCIES;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033687904     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0238-6     Document Type: Article

References (24)

1. G. Destefanis and J.P. Chamonal, J. Electron. Mater. 22, 1027 (1993).
2. A. Ajisawa and N. Oda, J. Electron. Mater. 24, 1105 (1995).
3. A. Rogalski and W. Larkowski, Electron. Technol. 18, 55 (1985).
4. J. Bajaj, S.H. Shin, J.G. Pasko, and Khoshnevisan, J. Vac. Sci. Technol. A1, 1749 (1983).
5. D.E. Lacklison and P. Capper, Semicond. Sci. Technol. 2, 33 (1987).
6. R. Fastow and Y. Nemirovsky, J. Vac. Sci. Technol. A8, 1245 (1990).
7. M.C. Chen and L. Colombo, J. Appl. Phys. 72, 4761 (1992).
8. P. Mitra, T.R. Schimert, F.C. Ccase, and S.L. Barnes, J. Electron. Mater. 24, 1077 (1995).
9. S.D. Yoo and K.D. Kwack, J. Appl. Phys. 83, 2586 (1988).
10. C.E. Jones, V. Nair, and D.L. Polla, Appl. Phys. Lett. 39, 248 (1981).
11. D.L. Polla and C.E. Jones, J. Appl. Phys. 52, 5118 (1981).
12. D.L. Polla, S.P. Tobin, M.B. Reine, and A.K. Sood, J. Appl. Phys. 52, 5182 (1981).
13. Y.H. Kim, S.H. Bae, C.K. Kim, and H.C. Lee, Proc. SPIE, 3436-14.
14. J. Bajaj and W.E. Tennant, J. Cryst. Growth 103, 170 (1990).
15. J. Bajaj, W.E. Tennant, R. Zucca, and S.J.C. Irvine, Semicond. Sci. Technol. 8, 872 (1993).
16. C.A. Musca, J.F. Siliquini, E.P.G. Smith, J.M. Dell, and L. Faraone, J. Electron. Mater. 27, 661 (1998).
17. L.O. Bubulac, J. Cryst. Growth 86, 723 (1988).
18. D. Redfield, Appl. Phys. Lett. 35, 182 (1979).
19. J.H. Pimbley, IEEE Trans. Electron Devices 35, 1957 (1988).
20. S.E. Schacham and E. Finkman. J. Appl. Phys. 71, 5033 (1992).
21. Y. Nemirovsky and D. Rosenfeld, J. Appl. Phys. 63, 2435 (1988).
22. R. Fastow and Y. Nemirovsky, J. Appl. Phys. 66, 1705 (1989).
23. G.M. Murphy, Ordinary Differential Equations and Their Solutions (Princeton, NJ: van Nostrand Reinhold, 1960).
24. S.E. Schacham, J. Appl. Phys. 68, 865 (1990).