Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1266-1269

  Jung, Han ^a,b   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hyundai Electronics Industry Co

Author keywords

Diffusion length; Field effect transistor (FET); HgCdTe; Hydrogenation; Lifetime; Mobility; Photodiode

Indexed keywords

EID: 0000352876     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655018     Document Type: Article

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