Electrical activation and electrical properties of arsenic doped Hg1-xCdxTe epilayers grown by MBE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4454, Issue , 2001, Pages 71-77

  Selamet, Y ^a   Badano, G ^a   Grein, C H ^a   Boieriu, P ^b   Nathan, V ^c   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b EPIR TECHNOLOGIES INC   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Annealing; Arsenic activation; Hall effect; HgCdTe; Kane model; Molecular beam epitaxy; MWIR; Van Der Pauw

Indexed keywords

ANNEALING; ARSENIC; DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; INFRARED RADIATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; THERMAL EFFECTS;

ELECTRICAL ACTIVATION; KANE MODEL; MERCURY CADMIUM TELLURIDE; VAN DER PAUW TECHNIQUE;

MERCURY COMPOUNDS;

EID: 0035760606     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.448162     Document Type: Article

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