Origin of the novel magnetoresistance oscillation of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Chinese Physics Letters

Volumn 18, Issue 12, 2001, Pages 1641-1643

  Zheng, Ze Wei ^a,b   Shen, Bo ^a   Jiang, Chun Ping ^b   Zhang, Rong ^a   Shi, Yi ^a   Zheng, You Dou ^a   Zheng, Guo Zhen ^b   Guo, Shao Ling ^b   Chu, Jun Hao ^b  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; III-V SEMICONDUCTORS; MAGNETORESISTANCE; MODULATION;

HETERO-INTERFACES; LOW MAGNETIC FIELDS; MAGNETO-TRANSPORT MEASUREMENT; MEASUREMENTS OF; MODULATION-DOPED; N LAYERS; PIEZOELECTRIC POLARIZATIONS; POLARIZATION INDUCED CHARGES; TWO-DIMENSIONAL ELECTRON GAS; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

TWO DIMENSIONAL ELECTRON GAS;

EID: 0035732718     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/12/330     Document Type: Article

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