SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 6 I, 2001, Pages 2233-2237

The effects of proton irradiation on SiGe: C HBTs

(9) Zhang, Shiming a,b Niu, Guofu a,b Cressler, John D a,b Osten, Hans Joerg c Knoll, Dieter c Marshall, Cheryl J a,d Marshall, Paul W a,d Kim, Hak S a,e Reed, Robert A a,d

a IEEE (United States)

b AUBURN UNIVERSITY (United States)

c IHP (Germany)

d NASA GODDARD SPACE FLIGHT CENTER (United States)

e Jackson and Tull Chartered Engineers (United States)

Author keywords

Neutral base recombination; Proton irradiation; SiGe: C heterojunction bipolar transistor (HBTs)

Indexed keywords

NEUTRAL BASE RECOMBINATION;

CARBON; CURRENT DENSITY; INDUCED CURRENTS; PROTON IRRADIATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035720559 PISSN: 00189499 EISSN: None Source Type: Journal
DOI: 10.1109/23.983201 Document Type: Conference Paper

Times cited : (14)

References (12)

1
- 0030389382
- Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation
- (1996) Proc. IEDM Tech. Dig. , pp. 249-252
- Lanzarotti, L.D.¹ Sturm, J.C.² Stach, E.³ Hull, R.⁴ Buyuklimanli, T.⁵ Magee, C.⁶

2
- 84886448135
- The effects of carbon incorporation on SiGe heterobipolar transistor performance and process margin
- (1997) IEDM Tech. Dig. , pp. 803-806
- Osten, H.J.¹ Lippert, G.² Knoll, D.³ Barth, R.⁴ Heinemann, B.⁵ Rücker, H.⁶ Schley, P.⁷

3
- 0032276830
- Si/SiGe: C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology
- (1998) Proc. IEDM Tech. Dig. , pp. 703-706
- Knoll, D.¹ Heinemann, B.² Osten, H.J.³ Ehwald, K.E.⁴ Tillack, B.⁵ Schley, P.⁶ Barth, R.⁷ Matthes, M.⁸ Park, K.S.⁹ Kim, Y.¹⁰ Winkler, W.¹¹

4
- 0000078010
- Calibrated charge particle measurement system with precision dosimetric measurement and control
- (1991) Nucl. Instrum. Meth. , vol.B56-57 , pp. 616
- Murray, K.M.¹ Stapor, W.J.² Castenada, C.³

5
- 0028713285
- Particle-induced bit errors in high performance fiber optic data links for satellite data management
- Dec.
- (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 1958-1965
- Marshall, P.W.¹ Dale, C.J.² Carts, M.A.³ Label, K.A.⁴

6
- 0004161584
- Oxford, U.K.: Oxford Science
- (1993) Handbook of Radiation Effects
- Siedle, A.H.¹ Adams, L.²

7
- 0029274369
- Physically based comparison of hot-carrier-induced and ionizing radiation-induced degradation in BJTs
- (1995) IEEE Trans.Electron Devices , vol.42 , pp. 436-444
- Kosier, S.L.¹ Wei, A.² Schrimpf, R.D.³ Fleetwood, D.M.⁴ DeLaus, M.D.⁵ Pease, R.L.⁶ Combs, W.E.⁷

8
- 0026390651
- Response of advanced bipolar processes to ionizing radiation
- (1991) IEEE Trans. Nucl. Sci. , vol.38 , pp. 1342-1351
- Enlow, E.W.¹ Pease, R.L.² Combs, W.E.³ Schrimpf, R.D.⁴ Nowlin, R.N.⁵

9
- 0032311695
- An investigation of the spatial location of proton-induced traps in SiGe HBT's
- Dec.
- (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 2424-2430
- Roldán, J.¹ Niu, G.² Ansley, W.E.³ Cressler, J.D.⁴ Clark, S.D.⁵

10
- 0028728514
- Bounding the total-dose response of modern bipolar transistors
- Dec.
- (1994) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1864-1870
- Kosier, S.L.¹ Combs, W.E.² Wei, A.³ Schrimpf, R.D.⁴ Fleetwood, D.M.⁵ DeLaus, M.D.⁶ Pease, R.L.⁷

11
- 0033280016
- Carbon doped SiGe heterojunction bipolar transistors for high frequency applications
- (1999) Proc. IEEE BCTM , pp. 109-116
- Osten, H.J.¹ Knoll, D.² Heinemann, B.³ Rücker, H.⁴ Tillack, B.⁵

12
- 0031104183
- Neutral base recombination and its influence on the temperature dependence of early voltage and current gain-early voltage product in UHV/CVD SiGe HBTs
- Mar.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 404-413
- Joseph, A.J.¹ Cressler, J.D.² Richey, D.M.³ Jaeger, R.C.⁴ Harame, D.L.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.