Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2770-2772

  Sousa, Ricardo C ^a,b   Freitas, Paulo P ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Magnetic tunnel junctions; Magnetization reversal; MRAM

Indexed keywords

CMOS INTEGRATED CIRCUITS; FABRICATION; LITHOGRAPHY; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; RANDOM ACCESS STORAGE;

MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELLS;

TUNNEL JUNCTIONS;

EID: 0034260967     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908585     Document Type: Article

References (6)

1. Observation of magnetic switching in submicron magnetic tunnel junctions at low frequency
2. Buried word line planarization and roughness control for tunnel junction magnetic random access memory switching
3. Effect of grain size and crystalline orientation on magnetic switching
4. Magnetization reversal in micron-sized magnetic thin films
5. Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays
6. High-speed characterization of submicrometer giant magnetoresistive devices