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Volumn , Issue , 2001, Pages 133-136

Soft breakdown free atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODEPOSITION; GATES (TRANSISTOR); SEMICONDUCTOR GROWTH; SILICA; SILICON NITRIDE; VOLTAGE MEASUREMENT;

EID: 0035714268     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (8)
  • 4
    • 0000008173 scopus 로고    scopus 로고
    • 2 staked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 2855
    • Nakajima, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.