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Volumn , Issue , 2001, Pages 133-136
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Soft breakdown free atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC MATERIALS;
ELECTRODEPOSITION;
GATES (TRANSISTOR);
SEMICONDUCTOR GROWTH;
SILICA;
SILICON NITRIDE;
VOLTAGE MEASUREMENT;
ATOMIC LAYER DEPOSITED SILICON DIOXIDE;
ATOMIC LAYER DEPOSITED SILICON NITRIDE;
RAMPED VOLTAGE STRESSING;
SOFT BREAKDOWN;
STACK GATE DIELECTRICS;
THERMALLY GROWN SILICON DIOXIDE;
TIME DEPENDENT DIELECTRIC BREAKDOWN;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0035714268
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (11)
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References (8)
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