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Volumn 40, Issue 12, 2001, Pages 6737-6740
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Effect of tantalum in crystal growth of silicon carbide by sublimation close space technique
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Author keywords
Epitaxial growth; High growth rate; Silicon carbide; Sublimation close space technique; Tantalum
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Indexed keywords
ALUMINUM;
ATOMIC FORCE MICROSCOPY;
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
PHOTOLUMINESCENCE;
SILICON CARBIDE;
SUBLIMATION;
SURFACES;
TANTALUM;
TITANIUM;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
CRYSTAL QUALITY;
GROWTH RATE;
HIGH RESOLUTION X RAY DIFFRACTION;
SUBLIMATION CLOSE SPACE TECHNIQUE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0035710294
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.6737 Document Type: Article |
Times cited : (19)
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References (12)
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