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Volumn 40, Issue 12, 2001, Pages 6737-6740

Effect of tantalum in crystal growth of silicon carbide by sublimation close space technique

Author keywords

Epitaxial growth; High growth rate; Silicon carbide; Sublimation close space technique; Tantalum

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SILICON CARBIDE; SUBLIMATION; SURFACES; TANTALUM; TITANIUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0035710294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6737     Document Type: Article
Times cited : (19)

References (12)
  • 8
    • 0008403207 scopus 로고    scopus 로고
    • Doctoral thesis, Kyoto University; Kyoto, Japan
    • (1996)
    • Kimoto, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.