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Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 537-540

Ground states of the ionized isoelectronic Ti acceptor in SiC

(5) Dalibor, T a Pensl, G a Nordell, N b Schoner A b Choyke, W J c

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b ACREO AB (Sweden)

c UNIVERSITY OF PITTSBURGH (United States)

Author keywords

Admittance Spectroscopy; Deep Level Transient Spectroscopy; Ground State Levels; Isoelectronic Titanium Acceptor

Indexed keywords

CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ENERGY GAP; ION IMPLANTATION; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM;

ADMITTANCE SPECTROSCOPY; ISOELECTRONIC TITANIUM ACCEPTOR;

SILICON CARBIDE;

EID: 0031648403 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.537 Document Type: Article

Times cited : (7)

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