Suppression of parasitic substrate modes in flip-chip packaged coplanar W-band amplifier MMICs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 543-546

  Tessmann, Axel ^a   Haydl, William H ^a   Kerssenbrock, Thomas V ^b   Heide, Patric ^b   Kudszus, Steffen ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b EPCOS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; CROSSTALK; ELECTRIC CONDUCTIVITY; FEEDBACK; FLIP CHIP DEVICES; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVE AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; STABILITY; SUBSTRATES; WAVEGUIDES;

CARRIER THICKNESS; FLIP CHIP ASSEMBLIES; HIGH GAIN AMPLIFIERS; MILLIMETER WAVE INTEGRATED CIRCUITS; PARASITIC SUBSTRATE MODES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035692459     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966951     Document Type: Article

References (11)

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7. Avoiding cross talk and feedback effects in packaging coplanar MM-wave circuits
8. W-band cascode amplifier modules for passive imaging applications
9. Supression of resonant leakage effects in coplanar MMIC packages using a silicon sub-mount layer
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11. W-band InP HEMT MMICs using finite-ground coplanar waveguide (FGCPW) design