An InP HEMT MMIC LNA with 7.2-dB Gain at 190 GHz

IEEE Microwave and Guided Wave Letters

Volumn 8, Issue 11, 1998, Pages 393-395

  Lai, R ^a   Barsky, M ^a   Huang, T ^a   Sholley, M ^a   Wang, H ^a,b   Kok, Y L ^a   Streit, D C ^a   Block, T ^a   Liu, P H ^a   Gaier, T ^c   Samoska, L ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

BALANCED AMPLIFIERS; LOW NOISE AMPLIFIERS (LNA);

MICROWAVE AMPLIFIERS;

EID: 0032208628     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.736257     Document Type: Article

References (7)

1. 0.48As HEMT's," IEEE Electron Device Lett., vol. 15, p. 477, Nov. 1994.
2. 0.8As high electron mobility transistors," IEEE Electron Device Lett., vol. 13, p. 143, Mar. 1993.
3. max" IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995.
4. R. Lai et al., "D-band MMIC LNA's with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process," in Proc. 1997 InP Related Materials Conf., Hyannis, MA, p. 241.
5. H. Wang et al., "Fully passivated W-band InGaAs/InAlAs/InP monolithic low noise amplifiers," Proc. Inst. Elect. Eng., Microwave, Antennas and Propagation, vol. 143, no. 5, Oct. 1996.
6. T. Gaier et al., "On-wafer measurement system up to 220 GHz," IEEE Microwave Guided Wave Lett., submitted for publication.
7. S. Weinreb et al., "High-gain 150-180 GHz MMIC amplifier with integral waveguide transitions," IEEE Microwave Guided Wave Lett., submitted for publication.