SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 441-446

Spatially indirect excitons in self-assembled Ge/Si quantum dots

(5) Yakimov, A I a Dvurechenskii, A V a Stepina, N P a Nenashev, A V b Nikiforov, A I a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; ELECTRON MOBILITY; EXCITONS; HOLE TRAPS; PHOTOCONDUCTIVITY; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL EXCITATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035675853 PISSN: 09574484 EISSN: None Source Type: Journal
DOI: 10.1088/0957-4484/12/4/311 Document Type: Conference Paper

Times cited : (6)

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