Compensation mechanism in MOCVD and MBE grown GaN: Mg

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 38-41

  Alves, H ^a   Bohm M ^a   Hofstaetter, A ^a   Amano, H ^b   Einfeldt, S ^c   Hommel, D ^c   Hofmann, D M ^a   Meyer, B K ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b Department of Electrical and Electronic Engineering ^*  (Japan)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

Compensating donors; GaN; Mg acceptor

Indexed keywords

COMPENSATING DONORS;

BINDING ENERGY; GALLIUM NITRIDE; HALL EFFECT; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035670997     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00663-9     Document Type: Article

References (11)