Optimization of AlGaN/GaN HEMT performance

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 31-36

  Javorka, P ^a   Wolter, M ^a   Alam, A ^a   Fox, A ^a   Marso, M ^a   Heuken, M ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; HEAT LOSSES; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

GAIN CUT-OFF FREQUENCIES; OUTPUT POWER DENSITY; PINCH-OFF; SATURATION CURRENT; STATIC HEAT DISSIPATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035573258     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Extrinsic performance limitations in AlGaN/GaN heterostructure field effect transistors
2. Fabrication and performance of GaN electronic devices
3. Novel HEMT layout: The RoundHEMT
4. Investigations on the influence of traps in AlGaN/GaN HEMTs
5. GaN processing, defects, and devices
6. Performance and limitation of AlGaN/GaN HFETs grown on sapphire and SiC substrates
7. AlGaN/GaN round-HEMTs on (111) silicon substrates
8. A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs