Effect of thermal annealing on the photoluminescence properties of a GaInNAs/GaAs single quantum well

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Grenouillet, Laurent ^a   Bru Chevallier, Catherine ^a   Guillot, Gérard ^a   Gilet, Philippe ^a   Ballet, Philippe ^a   Duvaut, Philippe ^a   Chenevas Paule, André ^a   Million, Alain ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCITONS; INTERDIFFUSION (SOLIDS); LIGHT EMISSION; LOW TEMPERATURE TESTING; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM INDIUM NITROGEN ARSENIDE; LOCALIZATION EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035557626     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)