Electrical and structural characteristics of ultra-thin TiO2/Ti-Si-O stacked gate insulator formed by RF sputtering technique

Materials Research Society Symposium - Proceedings

Volumn 670, Issue , 2001, Pages

  Koyama, M ^a   Kaneko, A ^a   Koike, M ^a   Fujiwara, I ^a   Yabuki, M ^a   Yoshiki, M ^a   Nishiyama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC INSULATORS; ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); PERMITTIVITY; POLARIZATION; SPUTTERING; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

GATE INSULATORS;

GATES (TRANSISTOR);

EID: 0035557145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)