|
Volumn 664, Issue , 2001, Pages
|
Higher efficiency of n-i-p solar cells by Hot-Wire CVD at moderate temperatures
a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ABSORPTION;
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLINE MATERIALS;
ELECTRIC POTENTIAL;
ENERGY GAP;
HIGH TEMPERATURE EFFECTS;
HYDROGEN;
RATE CONSTANTS;
HOT-WIRE CHEMICAL VAPOR DEPOSITIONS (HWCVD);
SILICON SOLAR CELLS;
|
EID: 0035557062
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-664-a11.2 Document Type: Conference Paper |
Times cited : (3)
|
References (11)
|