Reverse diode leakage in spike-annealed ultra-shallow junctions

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages

  Gossmann, Hans Joachim L ^a   Feng, Tao ^a   Agarwal, Aditya ^a   Frisella, Peter ^a   Rubin, Leonard M ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; LITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES;

ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0035557038     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-669-j8.4     Document Type: Conference Paper

References (8)

1. Physical mechanisms of transient-enhanced dopant diffusion in ion-implanted silicon
2. Junctions for deep sub-100 nm mos: How far will ion implantation take us?
3. Series resistance limits for 0.05 μm MOSFETs
4. Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: Effect of ramp-up rate
5. Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
6. Boron-enhanced diffusion of boron from ultralow-energy ion implantation
7. Boron-enhanced diffusion of boron: Physical mechanisms