Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1694-1697

  Makimoto, Toshiki ^a   Saito, Hisao ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

(001); Atomic layer doping; Dimethylhydrazine; GaAs; Isoelectronic traps; MOVPE; N pair; Photoluminescence; doping

Indexed keywords

EID: 0000779035     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1694     Document Type: Article

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