Surface passivation of GaAs using an ultrathin cubic GaN interface control layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1589-1596

  Anantathanasarn, Sanguan ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; NITROGEN; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SILICON NITRIDE; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ACTIVE NITROGEN RADICAL; INTERFACE CONTROL LAYER; NITRIDATION; SURFACE PASSIVATION; ULTRATHIN CUBIC GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535358     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1388605     Document Type: Conference Paper

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