Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 710-713

  Hasegawa, Hideki ^a   Kodama, Satoshi ^a   Ikeya, Kengo ^a   Fujikura, Hajime ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Interface state density; Pl efficiency; Quantum structures

Indexed keywords

COMPUTER AIDED ANALYSIS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SURFACE TREATMENT;

EXCITATION POWER DEPENDENT PHOTOLUMINESCENCE; SILICON INTERFACE CONTROL LAYER TECHNOLOGY;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0031548796     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80169-9     Document Type: Article

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