Low-energy carbon and nitrogen ion implantation in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1124-1132

  Barbadillo, L ^a   Hernandez M J ^a   Cervera, M ^a   Rodriguez P ^a   Piqueras, J ^a   Munoz Yague A ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LATTICE CONSTANTS; NITROGEN; RAPID THERMAL ANNEALING; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

FLOAT ZONE; LATTICE MISMATCH; SILICON OVERLAYER;

ION IMPLANTATION;

EID: 0035535235     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1381068     Document Type: Conference Paper

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